- 応募したい企業を探す。いつでも可。
- 履歴書を送る（数百人）。
- 電話もしくはskype面接を行う（数十人）。
- 直接企業を訪問し、プレゼンと面接、夕食会を行う（数人）。
アカデミックと企業では応募する履歴書の形態が異なります。
アカデミックの場合（CV）、学会や論文、特許などを全て書きます。ページ数に制限はありません。
企業の場合（Resume）、履歴書は2頁以内に抑えます。以下、企業用履歴書の書き方です。
一人当たり10秒しか見られないので、最低限の情報を最高の形でアピールします。
企業の応募内容に沿うものを、特に見やすく書くと目にとまりやすいと思います。
写真や宗教、性別などは不要です。名前、電話番号、住所、SNSを3行程度で最初に書きます。
連絡が取れればいいので、USAや郵便番号などの詳細は不要です。SNSはlinked inがオススメ。
フォントはtimes new romanやArielなどの一般的なもので、10-12のサイズを使います。
タイトルやアピールポイントは太字やイタリックを使います。第一人称"Ｉ"は使いません。
次に、summaryを書きます。どんな研究をしてきたか、何に興味があるか。
アピールポイントを4行くらいで。グリーンカードを持っているなら、その情報も。
Skillは、募集内容に沿う形で、うまくアピールしましょう。分野毎に書き方は変わると思います。
Experienceは、場所と期間、各仕事に対してProject, Action, Resultの三つを書きます。
PARとは、どんな仕事内容で、どういう立場で、どんな結果が出たのか。
- P: In-vitro 3D human small intestine modeling
- A: As project manager, performed fabrication technique
- R: Developed fabrication technique of the model
--> Managed project team that developed fabrication technique of the mold with precise shape and density of human small intestinal villi and invented the first in-vitro 3D human small intestine model.
他分野と、共同研究をし、それを指示していれば、どれもプラスです。全て入れましょう。
盛大な成果は不要です。できれば次の仕事に活かされているように書きましょう。
Indeed.comを見ると、どういう内容を書くか参考になると思います。日本語ならコレかな？
Publicationは、自分が何番目の著者か分かりやすいようにします。論文の題名も入れます。
AwardsやPatentは、あれば書きます。TAなどの教育歴やボランティアもあればいれます。
電気系ポスドクの一例を下に書いておきます。MITの参考例はコチラ。
人事の目に留まりやすいように、アピールポイントやスタイルを工夫してみてください。
ACADEMIC RESEARCH EXPERIENCE
Massachusetts Institute of Technology, Department of Electrical Engineering and Computer Science, Cambridge, MA 2014-present
Post-Doctoral Fellow
- Collaborated in a project of GaAs high electron mobility transistors, applied GaAs etching techniques for MESA isolation.
- Built the mathematically model of electrical field around gate electrode, and simulated the break-down fields.
Cambridge University, Department of Physics, London, England 2012-2014
Post-Docotral Associate
- Led team in a project of XXXX.
- Supervised the project of YYYY.
- Collaborated in a project of ZZZ.
Tohoku University, Department of Electronics Engineering, Sendai, Japan 2007-2012
Graduate Research Assistant
- Built the model of AAAA.
- Developed BBBB.
Osaka University, Department of Chemistry, Osaka, Japan 2006-2007
Undergraduate Research Program
- Collaborated in a project of PPPP.
- Implemented QQQQ.
EDUCATION
Tohoku University, Sendai, Japan 2007-2012
Ph.D Electrical Engineering
- Dissertation: Study of GaAs high fequency devices
- Advise: Hanako Tohoku, Ph.D
- Coursework: Modern Control Theory, LLLLL. MMMMM. NNNNN.
Osaka University, Osaka, Japan 2003-2007
B.S. Acoustics
- Class rank: 3/ 200
- Senior project: Crystal Growth of GaAs
- Adviser: Jiro Osaka, Ph.D
SERVICES & ACTIVITIES
- Reviewer of Journals: Japanese Journal of Applied Physics; Applied Physics Express from 2008.
- Teaching assistant on Principles of Electronic Circuits 2007-2008
- Social practice in TOTOTA Company 2006
- Volunteering in TOTY School for autistic children 2006-2007
HONORS & AWARDS
- Excellent doctoral degree dissertation of Tohoku University 2012
- Integrated Scholarship of Tohoku University for academic achievement 2007-2009
TECHNICAL SKILLS
- Programming: Matlab, Python, Visual C++
- Electrical field simulation: TCAD
- Algorithms: Monte Carlo simulation
- Application: Microsoft office (Word, Excell, Power point, etc), Adobe Illustrator
SELECTED PUBLICATION
1. T. MIT and H. Tohoku. GaAs device fabrication. Jpn J. of Appl. Phys. Nov. 2009, 50(2): 250-255.
2. T. MIT and H. Tohoku. InP device fabrication. Appl. Phys. Exp. Dec. 2008, 20(1): 20-22.
Taro MIT
(000)000-0000 | taro@mit.edu | 100 Main St. Reading, MA | http://www.linledin.com/pub/taro
SUMMARY
Highly motivated PhD in Electrical Engineering with over 3 years experience in high-power devices and 2 years experience in TCAD device simulation. Extensive knowledge in electrical field analysis, device processing, mathematical modeling and programming. Strong ability to collaborate and work in a team environment on multi-disciplinary projects as well as work independently. Excellent technical, analytical, and communication skills. Highly passionate about squaring new scientific skills.
ACADEMIC RESEARCH EXPERIENCE
Massachusetts Institute of Technology, Department of Electrical Engineering and Computer Science, Cambridge, MA 2014-present
Post-Doctoral Fellow
- Collaborated in a project of GaAs high electron mobility transistors, applied GaAs etching techniques for MESA isolation.
- Built the mathematically model of electrical field around gate electrode, and simulated the break-down fields.
Cambridge University, Department of Physics, London, England 2012-2014
Post-Docotral Associate
- Led team in a project of XXXX.
- Supervised the project of YYYY.
- Collaborated in a project of ZZZ.
Tohoku University, Department of Electronics Engineering, Sendai, Japan 2007-2012
Graduate Research Assistant
- Built the model of AAAA.
- Developed BBBB.
Osaka University, Department of Chemistry, Osaka, Japan 2006-2007
Undergraduate Research Program
- Collaborated in a project of PPPP.
- Implemented QQQQ.
EDUCATION
Tohoku University, Sendai, Japan 2007-2012
Ph.D Electrical Engineering
- Dissertation: Study of GaAs high fequency devices
- Advise: Hanako Tohoku, Ph.D
- Coursework: Modern Control Theory, LLLLL. MMMMM. NNNNN.
Osaka University, Osaka, Japan 2003-2007
B.S. Acoustics
- Class rank: 3/ 200
- Senior project: Crystal Growth of GaAs
- Adviser: Jiro Osaka, Ph.D
SERVICES & ACTIVITIES
- Reviewer of Journals: Japanese Journal of Applied Physics; Applied Physics Express from 2008.
- Teaching assistant on Principles of Electronic Circuits 2007-2008
- Social practice in TOTOTA Company 2006
- Volunteering in TOTY School for autistic children 2006-2007
HONORS & AWARDS
- Excellent doctoral degree dissertation of Tohoku University 2012
- Integrated Scholarship of Tohoku University for academic achievement 2007-2009
TECHNICAL SKILLS
- Programming: Matlab, Python, Visual C++
- Electrical field simulation: TCAD
- Algorithms: Monte Carlo simulation
- Application: Microsoft office (Word, Excell, Power point, etc), Adobe Illustrator
SELECTED PUBLICATION
1. T. MIT and H. Tohoku. GaAs device fabrication. Jpn J. of Appl. Phys. Nov. 2009, 50(2): 250-255.
2. T. MIT and H. Tohoku. InP device fabrication. Appl. Phys. Exp. Dec. 2008, 20(1): 20-22.
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